n B n detector, an infrared detector with reduced dark current and higher operating temperature

Abstract

This letter presents a type of infrared detector named the n B n detector. The n B n design essentially eliminates Shockley-Read-Hall generation currents. The result is greatly reduced dark current and noise, compared to other midwave infrared detectors, such as p - n photodiodes. This enables the n B n to operate at background-limited infrared photodetection conditions at significantly higher temperatures than conventional midwave infrared detectors and have greater detectivity near room temperature. The n B n is demonstrated in InAs and InAsSb materials, exhibiting cutoff wavelengths of 3.4 and 4.2 μ m , respectively.