Role of the Metal/Semiconductor Interface in Quantum Size Effects: Pb/Si(111)

Abstract

Self-organized islands of uniform heights can form at low temperatures on metal/semiconductor systems as a result of quantum size effects, i.e., the occupation of discrete electron energy levels in the film. We compare the growth mode on two different substrates [Si(111)- $(7\times 7)$ vs Si(111)- $\mathrm{Pb}(\sqrt{3}\times \sqrt{3})$] with spot profile analysis low-energy electron diffraction. For the same growth conditions (of coverage and temperature) 7-step islands are the most stable islands on the $(7\times 7)$ phase, while 5-step (but larger islands) are the most stable islands on the $(\sqrt{3}\times \sqrt{3})$. A theoretical calculation suggests that the height selection on the two interfaces can be attributed to the amount of charge transfer at the interface.