Novel Growth of Ag Islands on Si(111): Plateaus with a Singular Height
- 4 January 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 82 (1), 129-132
- https://doi.org/10.1103/physrevlett.82.129
Abstract
Growth and transport properties of thin Ag films on Si(111) are investigated by scanning tunneling microscopy and in situ resistivity measurements. At low coverage, the Ag adatoms form isolated islands with a strongly preferred height and flat tops, rather than commonly observed pyramids. Such plateaus increase their lateral extent with coverage without changing height, forming a percolated network with sharply reduced resistivity above a critical coverage. This behavior suggests how the quantized electrons confined in the Ag islands could influence the growth, and may provide a unique pathway to prepare nanometer-scale structures with intriguing mesoscopic properties.Keywords
This publication has 29 references indexed in Scilit:
- Adsorption of group-V elements on III–V (1 1 0) surfacesSurface Science Reports, 1996
- Atomic processes in crystal growthSurface Science, 1994
- Low temperature studies of semiconductor surfacesProgress in Surface Science, 1991
- Two-photon spectroscopy of MgO:Physical Review B, 1991
- Adsorbed layer and thin film growth modes monitored by Auger electron spectroscopySurface Science Reports, 1989
- Metallicity and gap states in tunneling to Fe clusters in GaAs(110)Physical Review Letters, 1989
- Growth modes of Ag deposited on Si(111) with simultaneous low energy ion bombardmentSurface Science, 1989
- Atomic distributions across metal–III-V-compound-semiconductor interfacesPhysical Review B, 1988
- Nucleation, growth and the intermediate layer in Ag/Si(100) and Ag/Si(111)Surface Science, 1984
- The adsorption of Ag on the Si(111) 7×7 surface at room temperature studied by medium energy ion scattering, LEED and AESSurface Science, 1984