Surface-passivation-induced optical changes in Ge quantum dots
- 29 May 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (23), 235314
- https://doi.org/10.1103/physrevb.63.235314
Abstract
One of the most interesting properties of quantum dots is the possibility to tune the band gap as a function of their size. Here we explore the possibility of changing the lifetime of the lowest-energy excited state by altering the surface passivation. We show that a moderately electronegative passivation potential can induce long-lived excitons without appreciable changes to the band gap. In addition, for such passivation the symmetry of the valence-band maximum is derived) instead of the more usual derived). This reverses the effect of the exchange interaction on the bright-dark exciton splitting.
Keywords
This publication has 12 references indexed in Scilit:
- crossover in the conduction-band minimum of Ge quantum dotsPhysical Review B, 2000
- Many-body pseudopotential theory of excitons in InP and CdSe quantum dotsPhysical Review B, 1999
- Changes in the Electronic Properties of Si Nanocrystals as a Function of Particle SizePhysical Review Letters, 1998
- Interplay of Coulomb, exchange, and spin-orbit effects in semiconductor nanocrystallitesPhysical Review B, 1998
- Electron-hole interactions in silicon nanocrystalsPhysical Review B, 1997
- Quantum confinement in semiconductor Ge quantum dotsSolid State Communications, 1997
- Quantum confinement of edge states in Si crystallitesPhysical Review B, 1997
- Quantum confinement in Si nanocrystalsPhysical Review B, 1993
- Confined excitons, trions and biexcitons in semiconductor microcrystalsSolid State Communications, 1989
- Quantum MechanicsAmerican Journal of Physics, 1979