Schottky-barrier capacitance measurements for deep level impurity determination
- 1 March 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (3), 375-380
- https://doi.org/10.1016/0038-1101(73)90012-9
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORSApplied Physics Letters, 1970
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- Capacitance Measurements on Au–GaAs Schottky BarriersJournal of Applied Physics, 1968
- Capacitance of Junctions on Gold-Doped SiliconJournal of Applied Physics, 1968
- Effects of deep impurities on n+p junction reverse-biased small-signal capacitanceSolid-State Electronics, 1968
- Trapping Effects in Au-n-Type GaAs Schottky Barrier DiodesJapanese Journal of Applied Physics, 1967
- Transient Phenomena in the Capacitance of GaAs Schottky Barrier DiodesJapanese Journal of Applied Physics, 1966
- Determination of Deep Centers in Conducting Gallium ArsenideJournal of Applied Physics, 1966
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963