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Observation of intrinsic bistability in resonant tunnelling devices
Home
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Observation of intrinsic bistability in resonant tunnelling devices
Observation of intrinsic bistability in resonant tunnelling devices
EA
E.S. Alves
E.S. Alves
LH
L. Haves
L. Haves
M. Henini
M. Henini
OH
O.H. Hughes
O.H. Hughes
M.L. Leadbeater
M.L. Leadbeater
FS
F.W. Sheard
F.W. Sheard
GT
G.A. Toombs
G.A. Toombs
GH
G. Hill
G. Hill
MP
M.A. Pate
M.A. Pate
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1 January 1988
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 24
(18)
,
1190-1191
https://doi.org/10.1049/el:19880809
Abstract
We report the first unambiguous observation of intrinsic bistability due to space charge build-up in an asymmetric GaAs/(AlGa)As double-barrier resonant tunnelling device.
Keywords
GAAS-ALGAAS
INTRINSIC BISTABILITY
DOUBLE-BARRIER RESONANT TUNNELLING DEVICE
ASYMMETRIC DEVICES
RESONANT TUNNELLING DEVICES
SPACE CHARGE BUILD-UP
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Cited by 95 articles