Thermally induced quantum well shape modification in strained heterostructures
- 31 December 1991
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 9 (4), 533-536
- https://doi.org/10.1016/0749-6036(91)90185-t
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealingJournal of Applied Physics, 1989
- Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]Applied Physics Letters, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985