1.3 [micro sign]m continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition
- 1 January 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (15), 1251-1252
- https://doi.org/10.1049/el:19990858
Abstract
1.3 µm continuous-wave operation of highly strained GaInNAs/GaAs double quantum-well lasers grown by metal organic chemical vapour deposition has been demonstrated. The threshold current and threshold current density of the 700 µm long laser at 20°C were 63 mAand 1.2 kA/cm2, respectively. These are the lowest values ever reported for 1.3 µm GaInNAs/GaAs lasers under continuous-wave operation. Characteristic temperatures as high as 128 K were observed under continuous-wave operation.Keywords
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