Liquid-Phase Epitaxial Growth of ZnS, ZnSe and Their Mixed Compounds Using Te as Solvent

Abstract

Epitaxial layers of ZnS, ZnSe and their mixed compounds were grown on ZnS substrates by the liquid-phase epitaxial growth (LPE) method using Te as the solvent. The open-tube slide-boat technique was used, and a suitable starting temperature for growth was found to be 850°C for ZnS and 700–800°C for ZnSe. The ZnS epitaxial layers grown on {111}A and {111}B oriented ZnS substrates were thin (∼1 µm) and smooth, had low, uniform Te concentrations (∼0.1 at.%) and were highly luminescent. The ZnSe epitaxial layers were relatively thick (10–30 µm) and had fairly high Te concentrations (a few at.%). Various mixed compound ZnS_1-x Se _x were also grown on ZnS substrates.