Influence of non-constant carrier mobility on the charge transport time in semiconductor detectors
- 31 May 1965
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 34, 157-159
- https://doi.org/10.1016/0029-554x(65)90277-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Pulse formation and transit time of charge carriers in semiconductor junction detectorsNuclear Instruments and Methods, 1964
- On the induced charge in semiconductor detectorsNuclear Instruments and Methods, 1963
- Transit time of charge carriers in the semiconductor ionization chamberNuclear Instruments and Methods, 1961
- The field-dependence of carrier mobility in silicon and germaniumJournal of Physics and Chemistry of Solids, 1960
- Drift and Conductivity Mobility in SiliconPhysical Review B, 1956
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953