Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate
- 18 February 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (8), 1168-1170
- https://doi.org/10.1063/1.123476
Abstract
The Schottky barrier heights of various metals on the high permitivity oxides tantalum pentoxide, barium strontium titanate, lead zirconate titanate, and strontium bismuth tantalate have been calculated as a function of the metal work function. It is found that these oxides have a dimensionless Schottky barrier pinning factor S of 0.28–0.4 and not close to 1 because S is controlled by Ti–O-type bonds not Sr–O-type bonds, as assumed in earlier work. The band offsets on silicon are asymmetric with a much smaller offset at the conduction band, so that and barium strontium titanate are relatively poor barriers to electrons on Si.
Keywords
This publication has 32 references indexed in Scilit:
- NANO-phase SBT-family ferroelectric memoriesIntegrated Ferroelectrics, 1998
- Model experiments on fatigue of Pb(Zr0.53Ti0.47)O3 ferroelectric thin filmsApplied Physics Letters, 1998
- Electronic Structure and Surface Properties of SrBi2Ta2O9 and Related OxidesMRS Proceedings, 1997
- Thermally robust Ta/sub 2/O/sub 5/ capacitor for the 256-Mbit DRAMIEEE Transactions on Electron Devices, 1996
- Optical Transmittance of Anodically Oxidized Aluminum AlloyJapanese Journal of Applied Physics, 1995
- First-principles investigation of ferroelectricity in perovskite compoundsPhysical Review B, 1994
- Epitaxial Growth of SrTiO3 Films on Pt Electrodes and Their Electrical PropertiesJapanese Journal of Applied Physics, 1992
- Asymmetric Electron Spin Resonance Signals in Hydrogenated Amorphous Germanium Carbide FilmsPhysica Status Solidi (b), 1992
- Chemical trends in metal-semiconductor barrier heightsPhysical Review B, 1978
- FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDSPhysical Review Letters, 1969