Hydrogen induced interfacial polarization at PdSiO2 interfaces
- 1 September 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 59 (1), 23-32
- https://doi.org/10.1016/0039-6028(76)90288-0
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- A hydrogen-sensitive Pd-gate MOS transistorJournal of Applied Physics, 1975
- Hydrogen leak detector using a Pd-gate MOS transistorReview of Scientific Instruments, 1975
- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975