A GaAs integrated differential amplifier for operation up to 300°C
- 31 July 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (7), 731-733
- https://doi.org/10.1016/0038-1101(91)90010-v
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A new GaAs technology for stable FETs at 300 degrees CIEEE Electron Device Letters, 1989
- Monolithic GaAs multivibrator for operation at temperatures up to 300°CElectronics Letters, 1989
- GaAs integrated Hall sensor with temperature-stabilised characteristics up to 300°CElectronics Letters, 1989
- A GaAs integrated hall sensor/amplifierIEEE Electron Device Letters, 1986
- GaAs Hall devices produced by local ion implantationSolid-State Electronics, 1981