Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructures
- 2 January 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (2), 449-454
- https://doi.org/10.1016/0022-0248(82)90464-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Automatic shutter controller for molecular beam epitaxyReview of Scientific Instruments, 1981
- Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructuresJournal of Applied Physics, 1981
- High mobility GaAs-AlxGa1−xAs single period modulation-doped heterojunctionsElectronics Letters, 1981
- High mobilities in AlxGa1−xAs-GaAs heterojuntionsApplied Physics Letters, 1980
- Transport properties of Sn-doped AlxGa1−xAs grown by molecular beam epitaxyJournal of Applied Physics, 1980
- Electronic Properties of a Semiconductor Superlattice II. Low Temperature Mobility Perpendicular to the SuperlatticeJournal of the Physics Society Japan, 1980
- Growth conditions to achieve mobility enhancement in AlxGa1−xAs-GaAs heterojunctions by m.b.e.Electronics Letters, 1980
- Impurity and phonon scattering in layered structuresApplied Physics Letters, 1979
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978