Plasma-Deposited Silicon Nitride Films from SiF2 as Silicon Source

Abstract

SiF₂ gas is used instead of SiF₄ as a reactant source for the plasma-deposition of silicon nitride. As compared with the reaction from the SiF₄–N₂–H₂ gas mixture, (i) the deposition rate is higher at the same N/Si ratio, (ii) more nitrogen, less fluorine and less oxygen are incorporated in the film, and (iii) the film can be deposited without H₂ gas. These results can be attributed to higher reactivity of the SiF₂ gas.