The electrical resistivity of boron nitride over the temperature range 700 degrees C to 1400 degrees C
- 14 July 1982
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 15 (7), 1143-1151
- https://doi.org/10.1088/0022-3727/15/7/009
Abstract
The electrical resistivity of pure hexagonal boron nitride in the c direction was measured from 700 degrees C to 1400 degrees C. Special attention was paid to allowance for electrical leakage of the measurement rig. The logarithm of the resistivity increased linearly with the reciprocal of absolute temperature, suggesting that conduction was intrinsic in the temperature range considered. A gap width of 7.1+or-0.1 eV between valence and conduction bands was deduced.Keywords
This publication has 4 references indexed in Scilit:
- The electrical conductivity of single-crystal and polycrystalline aluminium oxideJournal of Physics D: Applied Physics, 1970
- Synthesis of the Cubic Form of Boron NitrideThe Journal of Chemical Physics, 1961
- An X-ray study of boron nitrideActa Crystallographica, 1952
- L. A new form of electrometerJournal of Computers in Education, 1924