Intersubband hole absorption in GaAs-GaInP quantum wells grown by gas source molecular beam epitaxy
- 29 August 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (9), 1130-1132
- https://doi.org/10.1063/1.112119
Abstract
P‐doped GaAs‐GaInP quantum wells have been grown on GaAs substrate by gas source molecular beam epitaxy. Structural quality has been evidenced by x‐ray diffraction. A narrow low‐temperature photoluminescence full width at half‐maximum has been measured. Strong hole intersubband absorption has been observed at 9 μm, and its dependence on light polarization has been investigated.Keywords
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