Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: III . Defect Structure of Undoped

Abstract

Hall effect measurements were carried out on undoped crystals quenched to room temperature subsequent to equilibration at temperatures varying from 450° to 720°C under various partial pressures of Hg. The variation of the hole concentration as a function of the partial pressure of Hg indicates that the native acceptor defects are doubly ionized. Native donor defects are found to be negligible in concentration and the p‐type to n‐type conversion is shown to be due to residual donors and not due to native donor defects. Thermodynamic constant for the incorporation of the doubly ionized native acceptor defect has been established.