A new look at yield of integrated circuits

1 January 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 58 (8), 1290-1291
https://doi.org/10.1109/proc.1970.7911

Abstract

Expressions are derived for integrated-circuit yield as a function of active circuit area, using as a model random distributions of indistinguishable spot defects. Previous attempts to calculate integrated-circuit yield have used a nonrandom distribution of distinguishable spot defects as their model.

Keywords

INTEGRATED CIRCUIT YIELD
BARS
TEMPERATURE DEPENDENCE
LITHIUM COMPOUNDS
INTEGRATED CIRCUIT MODELING
ACTIVE CIRCUITS
RESONANT FREQUENCY
Q MEASUREMENT
BAND PASS FILTERS
TELEGRAPHY

This publication has 2 references indexed in Scilit:

Computation of integrated-circuit yields from the distribution of slice yields for the individual devices
IEEE Transactions on Electron Devices, 1968
Cost-size optima of monolithic integrated circuits
Proceedings of the IEEE, 1964

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