Energy Gaps of the III–V and the (Rare Earth)-V Semiconductors

Abstract

A simple empirical analysis allowing the prediction of the energy gaps of the III–V semiconductors and the rare‐earth nitride, phosphide, and arsenide semiconductors is given. The analysis is based on a correlation of the semiconductor energy gaps with the ionic and covalent atomic radii of the constituent elements and is not sensitive to changes in crystal structure in going from one compound to the other. Excellent agreement is obtained between the predicted and existing experimental values. Certain of the predictions are at variance with previously predicted values and the need for experimental work to decide between the alternative treatments is indicated.