Hg0.7Cd0.3Te charge-coupled device shift registers

Abstract

Eight‐bit CCD shift registers with 10‐μm‐long electrodes have been successfully fabricated on n‐type Hg_0.7Cd_0.3Te and operated between temperaures of 77 and 140 K. At 77 K, a charge transfer efficiency of 0.996 was obtained under four‐phase operation between 1 and 100 kHz clock frequencies. The input signal was provided by pulsing an input gate beyond the tunnel breakdown limit during the on‐time of the phase‐one potential well. Signal was detected using a floating‐gate output followed by correlated double sampling. The size of the signal is in agreement with predictions.