Transient experiments from the steady state in amorphous silicon: weak recombination and density of states
- 31 January 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 73 (2), 101-104
- https://doi.org/10.1016/0038-1098(90)91026-d
Abstract
No abstract availableKeywords
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- Drift Mobility and Photoconductivity in Amorphous SiliconPhysica Status Solidi (b), 1978