Observation of the transferred-electron effect in GaxIn1−xAsyP1−y
- 15 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (4), 300-301
- https://doi.org/10.1063/1.89651
Abstract
Transferred‐electron oscillation in devices employing GaxIn1−xAsyP1−y as the active material has been observed. An oscillation threshold average field of (5.5–8.6) ×103 V/cm was determined for 1.05‐eV band‐gap material having x and y values of approximately 0.13 and 0.37, respectively. A pulsed device had an efficiency of 0.5% at 27.49 GHz.Keywords
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