Electronic band structure and bonding in transition metal layered dichalcogenides by atomic orbital methods
- 28 November 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (22), 4501-4514
- https://doi.org/10.1088/0022-3719/11/22/007
Abstract
It is shown that the main features of the electronic structure of transition metal layered dichalcogenides can be calculated in a simple ab initio atomic orbital framework. Examples from Groups IV, V and VI of the transition series are considered.Keywords
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