Preparation of CdS/InP solar cells by chemical vapor deposition of CdS
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (4), 1603-1606
- https://doi.org/10.1063/1.323840
Abstract
CdS/InP heterojunctions are grown by chemical vapor deposition of CdS on InP in an open‐tube H2S/H2 flow system. The importance of H2S admixture for the etching and cleaning of the InP surface is demonstrated. The solar cell has an open‐circuit voltage of 0.78 V, fill factor of 0.75, and a power conversion efficiency of 13.5% for AM2 conditions.Keywords
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