Constitutional Supercooling and Facet Formation of GaAs
- 1 February 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (2), 439-440
- https://doi.org/10.1063/1.1702630
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Indium antimonide—A review of its preparation, properties and device applicationsSolid-State Electronics, 1962
- Growth facets on III–V intermetallic compoundsJournal of Physics and Chemistry of Solids, 1962
- Impurity Striations in Unrotated Crystals of InSbJournal of Applied Physics, 1961
- Constitutional supercooling during crystal growth from stirred melts—I: TheoreticalSolid-State Electronics, 1961
- A possible mechanism of crystal growth from the melt and its application to the problem of anomalous segregation at crystal facetsSolid-State Electronics, 1961
- Cross-sectional resistivity variations in germanium single crystalsSolid-State Electronics, 1960
- Facets and anomalous solute distributions in indium-antimonide crystalsPhilosophical Magazine, 1959
- Dislocations in GermaniumJournal of Applied Physics, 1955