Long-wavelength photoluminescence of InAs1−xSbx (0<x<1) grown by molecular beam epitaxy on (100) InAs
- 8 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (6), 489-491
- https://doi.org/10.1063/1.99421
Abstract
InAs1−xSbx films have been successfully prepared by molecular beam epitaxy on (100) InAs substrates. Long‐wavelength photoluminescence has been investigated over the complete compositional range. Luminescence peak wavelengths as long as 8 μm have been obtained for the first time among III‐V compound semiconductor materials in spite of the existence of a large lattice mismatch. These results are indicative of high‐quality material.Keywords
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