Method for measuring 3rd-order intermodulation distortion in GaAs f.e.t.s
- 1 January 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (23), 701-702
- https://doi.org/10.1049/el:19770496
Abstract
A technique for characterising the 3rd-order intermodulationdistortion properties of GaAs f.e.t.s as a function of the load admittance presented to the output of the device is described. These properties can be determined for virtually any load admittance, including a purely reactive termination. A practical f.e.t example is included for illustration.Keywords
This publication has 1 reference indexed in Scilit:
- High-efficiency MESFET linear amplifier operating at 4 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977