Hole and Electron Extraction Layers Based on Graphene Oxide Derivatives for High‐Performance Bulk Heterojunction Solar Cells

Abstract

By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs₂CO₃ to afford Cesium-neutralized GO (GO-Cs), GO derivatives with appropriate modification are used as both hole- and electron-extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole- and GO-Cs electron-extraction layers both outperform the corresponding standard BHJ solar cells.