Eigenschaften epitaxialer siliziumschichten auf spinell-einkristallen
- 30 April 1968
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 3 (4), 315-327
- https://doi.org/10.1016/0025-5408(68)90003-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Kristallbaufehler beim epitaxialen Wachstum von Silizium auf Magnesium–Aluminium‐SpinellPhysica Status Solidi (b), 1966
- Autodoping of Silicon Films Grown Epitaxially on SapphireJournal of the Electrochemical Society, 1966
- Silicon/Corundum EpitaxyJournal of Applied Physics, 1965
- Chemisorption and ordered surface structuresSurface Science, 1964
- Single-Crystal Silicon on a Sapphire SubstrateJournal of Applied Physics, 1964