Some new features of thermal donor formation in silicon at T < 800 K
- 16 October 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 97 (2), K173-K176
- https://doi.org/10.1002/pssa.2210970255
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Electrical and Optical Characterization of Thermal Donors in SiliconPhysica Status Solidi (a), 1986
- Oxygen-related thermal donors in silicon: A new structural and kinetic modelJournal of Applied Physics, 1984
- Nature of thermal donors in silicon crystalsPhysica Status Solidi (a), 1984
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- Vibrational absorption of carbon in siliconJournal of Physics and Chemistry of Solids, 1965
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958