Highly Reliable Thin Nitrided SiO2 Films Formed by Rapid Thermal Processing in an N2O Ambient
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A), L2333
- https://doi.org/10.1143/jjap.29.l2333
Abstract
A novel method of nitridation of thin SiO2 film (30 C/cm2) and indicates a quite uniform interface ordered within at least one or two atomic layers.Keywords
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