Nucleation and Growth in Vicinity of Growing Surface in Making Microcrystalline Silicon
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Control of silicon network structure in plasma depositionJournal of Non-Crystalline Solids, 1989
- Growth of Crystalline Silicon, Microcrystalline and Epitaxial at Low Substrate TemperatureMRS Proceedings, 1989
- Effect of grain boundaries on the Raman spectra, optical absorption, and elastic light scattering in nanometer-sized crystalline siliconPhysical Review B, 1987
- Hole Transport in Silicon Thin Films with Variable Hydrogen ContentJapanese Journal of Applied Physics, 1987
- Growth of Amorphous and Crystalline Silicon by HR-CVD (Hydrogen Radical Enhanced CVD)MRS Proceedings, 1987
- Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor DepositionJapanese Journal of Applied Physics, 1987
- Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °CApplied Physics Letters, 1986
- Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasmaJournal of Non-Crystalline Solids, 1983
- A thermodynamic criterion of the crystalline-to-amorphous transition in siliconPhilosophical Magazine Part B, 1982