Microscale degradation in (GaAl)As double-heterostructure diode lasers
- 1 November 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (9), 588-590
- https://doi.org/10.1063/1.89789
Abstract
The generation of self‐sustained pulsations in degraded (GaAl)As double‐heterostructure diode lasers is explained by invoking microscale absorption centers possessing a large cross section. The microscale degradation centers are found to affect the laser characteristics at a concentration level as low as 1014–1015 cm−3.Keywords
This publication has 2 references indexed in Scilit:
- Minority-carrier lifetime reduction in the initial degradation of long-life AlxGa1−xAs-GaAs lasersApplied Physics Letters, 1977
- Changes in the optical properties of CW (AlGa)As junction lasers during accelerated agingIEEE Journal of Quantum Electronics, 1977