EL‐3 is IBM’s third generation of e‐beam lithography tools developed for the fabrication of semiconductor devices using direct write techniques. The system is designed to operate as a direct write manufacturing tool in a semiconductor factory. EL‐3 has a high throughput capability that is competitive with many optical lithographysystems. The system has the capability to cover the lithography requirements at 1 μ and above. In addition, the tool can be operated as a highly effective mask maker. EL‐3 makes use of many of the state of the art techniques associated with electron beamsystemlithography. These techniques include (1) LEARN calibrated field scan, (2) high current, variable shaped spot, (3) dual channel deflection of large fields and of subfields, (4) high performance handling of large workpieces (6 1/2 in., 163 mm), and (5) Series/ 1 data handling, system control, and automatic operation EL‐3 can expose 30 4 in. (100 mm) wafers per hour at 1.5 μ lithography at 10 μC/cm2 current dose. Four EL‐3 tools have been completed and installed. These tools are being used for both development and manufacturing applications. The system and lithography performance achieved with these tools will be discussed, with SEM results shown for various process conditions and different resist materials.