Abstract
Measurements of photoelectric emission, optical absorption, photoconductivity and electrical conductivity have been used to construct an energy band scheme for the K2CsSb photocathode. The spectral sensitivity of the photoelectric yield may be fitted to Spicer's equation for photoemission from the valence band of semiconductors, and leads to a value of 2-1 ev for the depth of the top of the valence band below vacuum potential. Photoconductivity and optical absorption measurements suggest a band gap of about 1-0 ev. The temperature variation of electrical conductivity suggests the existence of impurity centres between about 0-2 and 0-5 ev above the top of the valence band. The thermionic work function, determined by a contact potential difference method, is about 1 6 ev.