Molecular beam epitaxial growth and optical properties of InAs1−xSbx in 8–12 μm wavelength range
- 6 April 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (14), 927-929
- https://doi.org/10.1063/1.97982
Abstract
We have successfully grown InAs1−xSbx by molecular beam epitaxy over the complete compositional range of 0<x<1 on InAs substrates. The band gaps have been measured using optical absorption and cut‐off wavelengths as long as 12.5 μm have been obtained.Keywords
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