Complex distribution effects of thin component ohmic-contact layers on GaAs
- 1 January 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (12), 263-264
- https://doi.org/10.1049/el:19750199
Abstract
A microprobe analysis of cleaved edges of GaAs samples containing the cross-section of ohmic contacts has shown that near the surface these contacts contain GaxIn1−xAs, which is probably caused by its precipitation to single-crystal nucleation Sites produced at the surface of the metallisation.Keywords
This publication has 1 reference indexed in Scilit:
- Handbook of Electronic MaterialsPublished by Springer Nature ,1971