CONDUCTIVITY AND HALL MOBILITY OF ION-IMPLANTED SILICON IN SEMI-INSULATING GALLIUM ARSENIDE
- 15 May 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (10), 311-313
- https://doi.org/10.1063/1.1652663
Abstract
Chromium‐doped semi‐insulating gallium arsenide has been successfully doped n‐type by ion implantation of silicon. Annealing studies are presented which show that at annealing temperatures in excess of 600°C, conductivity and Hall mobility rise to values comparable to those expected for heavily doped gallium arsenide.Keywords
This publication has 4 references indexed in Scilit:
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTSCanadian Journal of Physics, 1967
- Optical Absorption in Chromium Doped, High Resistivity GaAs in the 0.6 to 1.5 ev RangeJournal of the Electrochemical Society, 1966
- The Preparation of Semi-Insulating Gallium Arsenide by Chromium DopingJournal of the Electrochemical Society, 1964