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Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates
Home
Publications
Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates
Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates
YM
Y. J. Mii
Y. J. Mii
TL
T. L. Lin
T. L. Lin
YK
Y. C. Kao
Y. C. Kao
BW
B. J. Wu
B. J. Wu
KW
K. L. Wang
K. L. Wang
CN
C. W. Nieh
C. W. Nieh
DJ
D. N. Jamieson
D. N. Jamieson
JL
J. K. Liu
J. K. Liu
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1 March 1988
journal article
Published by
American Vacuum Society
in
Journal of Vacuum Science & Technology B
Vol. 6
(2)
,
696-698
https://doi.org/10.1116/1.584395
Abstract
No abstract available
Keywords
MOLECULAR BEAM EPITAXY
TRANSMISSION ELECTRON MICROSCOPY
TWINNING
ELECTRON MICROSCOPY
SUPERLATTICES
INTEGRATED CIRCUITS
CRYSTAL DEFECTS
SILICON
Cited by 22 articles