Identification of Metals in Scanning Tunneling Microscopy via Image States
- 27 February 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 74 (9), 1641-1644
- https://doi.org/10.1103/physrevlett.74.1641
Abstract
An oscillatory reversal of the contrast between Cu and Mo is observed with scanning tunneling microscopy (STM), using sample bias voltages of 5 V and higher. It is attributed to tunneling via a series of discrete states that are induced by a combination of the image potential and the applied field. They are offset in energy due to the different work functions of Cu and Mo. This effect provides a generally applicable mechanism for elemental contrast in STM.
Keywords
This publication has 17 references indexed in Scilit:
- Spectroscopic signature of Cu on W(110) from scanning tunneling microscopy and inverse photoemissionPhysical Review B, 1994
- Growth and morphology of partial and multilayer Fe thin films on Cu(100) and the effect of adsorbed gases studied by scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1993
- Direct observation of surface chemical order by scanning tunneling microscopyPhysical Review Letters, 1993
- Surface barrier resonances on a simple metalPhysical Review Letters, 1993
- Adsorption of boron on Si(111): Its effect on surface electronic states and reconstructionPhysical Review Letters, 1989
- Surface doping and stabilization of Si(111) with boronPhysical Review Letters, 1989
- Surface Electronic Structure of Si (111)-(7×7) Resolved in Real SpacePhysical Review Letters, 1986
- Phase analysis of image states and surface states associated with nearly-free-electron band gapsPhysical Review B, 1985
- Tunneling Spectroscopy and Inverse Photoemission: Image and Field StatesPhysical Review Letters, 1985
- Electron Interferometry at Crystal SurfacesPhysical Review Letters, 1985