Amorphous-silicon thin-film transistors with very high field-effect mobility
- 1 March 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (3), 120-121
- https://doi.org/10.1109/55.75730
Abstract
The fabrication and performance of hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with field-effect mobilities of 5.1 cm/sup 2//V-s are discussed. This is the highest field-effect mobility of this type of TFT reported to date. The device shows an on/off current ratio exceeding 10/sup 5/ and a subthreshold swing of 0.5 V/decade.Keywords
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