Preparation of MgIn2O4-X Thin Films on Glass Substrate by RF Sputtering

Abstract

MgIn₂O_4-X thin films were deposited onto a silica glass plate by the RF sputtering method. The highest conductivity observed for the film post-annealed under H₂ flow was 2.3×10² S/cm, with a carrier concentration of 6.3×10²⁰ cm^-3 and a mobility of 2.2 cm²·V^-1·s^-1. No distinct optical absorption band was observed in the visible region.