Ultrathin oxide-nitride dielectrics for rugged stacked DRAM capacitors
- 1 February 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (2), 86-88
- https://doi.org/10.1109/55.144967
Abstract
Ultrathin dielectric materials that provide high capacitance values are needed for 64- and 256-Mb stacked DRAMs. It is shown that capacitance values as high as 12.3 fF/ mu m/sup 2/ can be obtained with ultrathin nitride-based layers deposited on rugged polysilicon storage electrodes. These films present the reliability and low leakage current levels required for 3.3-V applications. The nitride thickness, however, cannot be scaled much below 6 nm to avoid the oxidation-punchthrough mechanisms that appear when too-thin films are unable to withstand the reoxidation step.Keywords
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