Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy

Abstract

We have studied properties of mesa and waveguide p‐i‐n detectors fabricated from multiple quantum well structures grown by gas source molecular beam epitaxy. With 50 InGaAs wells, each approximately 120 Å thick, mesa detectors show quantum efficiency of up to 77% at 1.56 μm and a capacitance limited pulse response of 200 ps. The photocurrent response of waveguide structures is strongly TE polarized and enhanced at the n=1 exciton. These devices could be useful as wavelength selective, polarization sensitive detectors.