III–V semiconductors on Si substrates: New directions for heterojunction electronics
- 28 February 1986
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 29 (2), 269-271
- https://doi.org/10.1016/0038-1101(86)90050-x
Abstract
No abstract availableKeywords
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- Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984
- Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) siliconElectronics Letters, 1984