Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
- 1 December 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (12A), L919
- https://doi.org/10.1143/jjap.23.l919
Abstract
GaAs MESFET ring oscillators were successfully fabricated on silicon substrate. GaAs epitaxial layers were grown directly by MOCVD on Si(100) substrate. A typical transconductance of 200 mS/mm was observed for the FET of 1.0 µm × 10 µm gate. A minimum propagation delay time of 51 ps/gate at a power dissipation of 1.1 mW/gate was observed for an E/D gate ring oscillator with gate length of 1.0 µm.Keywords
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