Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technology
- 31 July 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 46 (7), 1045-1050
- https://doi.org/10.1016/s0038-1101(02)00040-0
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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