Bound-Exciton Luminescence of Cu-Doped ZnSe

Abstract

As an experimental approach to clarify the correlation between doped impurity and native defects, copper was deped at a low temperature to high-purity ZnSe crystals with controlled deviation from stoichiometry by a previous heat treatment under molten Zn or saturation pressure of Se. Photoluminescence was measured and examined as a function of deviation from stoichiometry. The site selection doping of Cu was achieved by controlling native defect concentrations. I₁ ^deep lines are known to arise from acceptors of two different origins, V_Zn and Cu_Zn.