General comparison of the surface processes involved in nitridation of Si(100)-2×1byNH3and inSiNxfilm deposition: a photoemission study

Abstract

With use of x-ray photoelectron spectroscopy (XPS), the adsorption of ${\mathrm{NH}}_3$, both on c-Si(100) and during silicon nitride film growth, is comparatively examined over a wide range of substrate temperature $T_S$ between room temperature and 800 °C, gas pressure P(${\mathrm{NH}}_3$), and exposure E. For sake of comparison with the surface parameters, dynamical exposure $E_D$ or exposure times $t_D$ are defined for the growth process. Both in surface adsorption and during film growth strongly correlated behaviors can be observed. They concern the following: (i) the general $T_S$-dependent evolution of the chemisorbed species, i.e., ${\mathrm{NH}}_{\mathrm{x}}$, H, and finally N, and (ii) the particular exposure and $T_S$ behaviors of the latter nitridation regime, occurring in the 350–800 °C range.